SI4931DY-T1-E3

new-10%

Manufacturer part number:SI4931DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 12V 6.7A 8-SOIC

Case Package:SOT-23

Datasheet:SI4931DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	1.1W
Terminal Form	GULL WING
Base Part Number	SI4931
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	25 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 8.9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 350μA
Current - Continuous Drain (Id) @ 25°C	6.7A
Gate Charge (Qg) (Max) @ Vgs	52nC @ 4.5V
Rise Time	46ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	230 ns
Continuous Drain Current (ID)	-8.9A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	6.7A
Drain to Source Breakdown Voltage	-12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free