SI1539CDL-T1-GE3

new-10%

Manufacturer part number:SI1539CDL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30 Volts 0.7 Amps 0.34 Watts

Case Package:SOT-23

Datasheet:SI1539CDL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Power Dissipation	340mW
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	290mW
Turn On Delay Time	32 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	388m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	28pF @ 15V
Current - Continuous Drain (Id) @ 25°C	700mA 500mA
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 10V
Rise Time	19ns
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	10 ns
Turn-Off Delay Time	4 ns
Continuous Drain Current (ID)	700mA
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.7A
Drain-source On Resistance-Max	0.388Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free