BSD840NH6327XTSA1

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BSD840NH6327XTSA1

Manufacturer part number:BSD840NH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSD840NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSD840NH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Power Dissipation	500mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	BSD840
Pin Count	6
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	1.9 ns
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	400m Ω @ 880mA, 2.5V
Vgs(th) (Max) @ Id	750mV @ 1.6μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	78pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.26nC @ 2.5V
Rise Time	2.2ns
Turn-Off Delay Time	7.8 ns
Continuous Drain Current (ID)	880mA
Threshold Voltage	550mV
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	20V
Drain Current-Max (Abs) (ID)	3.5A
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1mm
Length	2mm
Width	1.25mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free