SI4932DY-T1-GE3

new-10%

Manufacturer part number:SI4932DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 30V 8A 8-SOIC

Case Package:SOT-23

Datasheet:SI4932DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	15MOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	3.2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	21 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free