SIZ710DT-T1-GE3

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Manufacturer part number:SIZ710DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 16A / 35A N-CH MOSFET

Case Package:SOT-23

Datasheet:SIZ710DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-PowerPair™
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2018
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	6.8mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	48W
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIZ710
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.6W
Case Connection	DRAIN
Power - Max	27W 48W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.8m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A 35A
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	15ns
Fall Time (Typ)	12 ns
Continuous Drain Current (ID)	16A
Threshold Voltage	2.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	35A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	70A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	2.2 V
Height	750μm
Length	6mm
Width	3.73mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free