SIZ918DT-T1-GE3

new-10%

Manufacturer part number:SIZ918DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 16A/28A 29/100W 12mohm / [email protected]

Case Package:SOT-23

Datasheet:SIZ918DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Power Dissipation	100W
Base Part Number	SIZ918
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	29W 100W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 15V
Current - Continuous Drain (Id) @ 25°C	16A 28A
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	28A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	16A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	16 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	6mm
Width	5mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant