NTDV18N06LT4G

new-10%

Manufacturer part number:NTDV18N06LT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 18A DPAK

Case Package:SOT-23

Datasheet:NTDV18N06LT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	2.1W Ta 55W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 9A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	675pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 5V
Rise Time	79ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	54A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	72 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free