SI5402DC-T1-GE3

new-10%

Manufacturer part number:SI5402DC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 6.7A 2.5W 35mohm @ 10V

Case Package:SOT-23

Datasheet:SI5402DC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	35mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	4.9A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	4.9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	35mOhm
Rds On Max	35 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant