FQPF12N60CT     Description

  These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are very suitable for efficient switching mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.

FQPF12N60CT    Features

? 12 A, 600 V, RDS(on) = 650 m? (Max.) @ VGS = 10 V,

ID = 6 A

? Low Gate Charge (Typ. 48 nC)

? Low Crss (Typ. 21 pF)

? 100% Avalanche Tested

FQPF12N60CT     Applications

efficient switching mode power supplies

active power factor correction

electronic lamp ballasts