SI1300BDL-T1-GE3

new-10%

Manufacturer part number:SI1300BDL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 400MA SC-70-3

Case Package:SOT-23

Datasheet:SI1300BDL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	190mW Ta 200mW Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190mW
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	850m Ω @ 250mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	35pF @ 10V
Current - Continuous Drain (Id) @ 25°C	400mA Tc
Gate Charge (Qg) (Max) @ Vgs	0.84nC @ 4.5V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	370mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.4A
Drain-source On Resistance-Max	0.85Ohm
DS Breakdown Voltage-Min	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant