SI5441DC-T1-GE3

new-10%

Manufacturer part number:SI5441DC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 3.9A 1206-8

Case Package:SOT-23

Datasheet:SI5441DC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Power Dissipation	1.3W
Turn On Delay Time	20 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	55mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.9A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	3.9A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	55mOhm
Rds On Max	55 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant