SPI11N65C3XKSA1

new-10%

Manufacturer part number:SPI11N65C3XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 11A TO-262

Case Package:SOT-23

Datasheet:SPI11N65C3XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	PG-TO262-3-1
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	125W Tc
Element Configuration	Single
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3.9V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	650V
Input Capacitance	1.2nF
Drain to Source Resistance	380mOhm
Rds On Max	380 mΩ
Height	9.45mm
Length	10.36mm
Width	4.52mm
RoHS Status	RoHS Compliant