NP82N055PUG-E1-AY

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Manufacturer part number:NP82N055PUG-E1-AY

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 55V 82A TO-263

Case Package:SOT-23

Datasheet:NP82N055PUG-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Configuration	Single
Power Dissipation-Max	1.8W Ta 143W Tc
Power Dissipation	1.8W
Turn On Delay Time	40 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.2m Ω @ 41A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	82A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	93ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	82A
Gate to Source Voltage (Vgs)	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free