SI5463EDC-T1-GE3

new-10%

Manufacturer part number:SI5463EDC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 3.8A 1206-8

Case Package:SOT-23

Datasheet:SI5463EDC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Weight	84.99187mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	62mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.25W Ta
Element Configuration	Single
Turn On Delay Time	1.85 μs
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	3.2μs
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	3.2 μs
Turn-Off Delay Time	1.9 μs
Continuous Drain Current (ID)	-51A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Drain to Source Resistance	62mOhm
Rds On Max	62 mΩ
Height	1.1mm
Length	3.05mm
Width	1.65mm
RoHS Status	ROHS3 Compliant