SI5499DC-T1-E3

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Manufacturer part number:SI5499DC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 8V 6A 1206-8

Case Package:SOT-23

Datasheet:SI5499DC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.5W Ta 6.2W Tc
Element Configuration	Single
Power Dissipation	2.5W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	36mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1290pF @ 4V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 8V
Rise Time	70ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	5V
Drain to Source Breakdown Voltage	8V
Input Capacitance	1.29nF
Drain to Source Resistance	36mOhm
Rds On Max	36 mΩ
RoHS Status	ROHS3 Compliant