SI5857DU-T1-E3

new-10%

Manufacturer part number:SI5857DU-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 6A PPAK CHIPFET

Case Package:SOT-23

Datasheet:SI5857DU-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Supplier Device Package	PowerPAK® ChipFet Dual
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	58mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	2.3W Ta 10.4W Tc
Turn On Delay Time	5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	480pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	58mOhm
Rds On Max	58 mΩ
Height	750μm
Length	3mm
Width	1.9mm
RoHS Status	ROHS3 Compliant