SI5935CDC-T1-E3

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Manufacturer part number:SI5935CDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 20V 4A 1206-8

Case Package:SOT-23

Datasheet:SI5935CDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Max Power Dissipation	3.1W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI5935
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	10 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A
Gate Charge (Qg) (Max) @ Vgs	11nC @ 5V
Rise Time	32ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.1Ohm
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free