SI7120DN-T1-GE3

new-10%

Manufacturer part number:SI7120DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 6.3A 1212-8

Case Package:SOT-23

Datasheet:SI7120DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Powers
Max Power Dissipation	1.5W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	6.3A Ta
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	12ns
Fall Time (Typ)	12 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.3A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	24 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free