SI7405BDN-T1-E3

new-10%

Manufacturer part number:SI7405BDN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 16A PPAK 1212-8

Case Package:SOT-23

Datasheet:SI7405BDN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	13mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.6W Ta 33W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 13.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 6V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	115nC @ 8V
Rise Time	60ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	13.5A
Gate to Source Voltage (Vgs)	8V
Pulsed Drain Current-Max (IDM)	40A
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free