SI7540ADP-T1-GE3

new-10%

Manufacturer part number:SI7540ADP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N & P-Chnl 20-V D-S

Case Package:SOT-23

Datasheet:SI7540ADP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	3.5W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1310pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A 9A
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.015Ohm
Pulsed Drain Current-Max (IDM)	35A
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant