SPB12N50C3ATMA1

new-10%

Manufacturer part number:SPB12N50C3ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET Transistor, N Channel, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V

Case Package:SOT-23

Datasheet:SPB12N50C3ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	560V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	11.6A
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	380m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	3.9V @ 500μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11.6A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	11.6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Nominal Vgs	3 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free