SI7664DP-T1-GE3

new-10%

Manufacturer part number:SI7664DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 40A 83W 3.1mohm @ 10V

Case Package:SOT-23

Datasheet:SI7664DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	3.1mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	5.4W Ta 83W Tc
Element Configuration	Single
Power Dissipation	5.4W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7770pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	125nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Input Capacitance	7.77nF
Drain to Source Resistance	3.1mOhm
Rds On Max	3.1 mΩ
RoHS Status	ROHS3 Compliant