SI7802DN-T1-E3

new-10%

Manufacturer part number:SI7802DN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 250V 1.24A 1212-8

Case Package:SOT-23

Datasheet:SI7802DN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Supplier Device Package	PowerPAK® 1212-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	435MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Power Dissipation	1.5W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	435mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C	1.24A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	19.5A
Threshold Voltage	3.6V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	250V
Drain to Source Resistance	435mOhm
Rds On Max	435 mΩ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free