DMN62D0UW-7

new-10%

Manufacturer part number:DMN62D0UW-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 0.34A

Case Package:SOT-23

Datasheet:DMN62D0UW-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	320mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	32pF @ 30V
Current - Continuous Drain (Id) @ 25°C	340mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.5nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±20V
Continuous Drain Current (ID)	340mA
Drain Current-Max (Abs) (ID)	0.34A
Drain-source On Resistance-Max	2Ohm
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant