IRF1405STRRPBF

new-10%

Manufacturer part number:IRF1405STRRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 131A D2PAK

Case Package:SOT-23

Datasheet:IRF1405STRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	200W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3m Ω @ 101A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	131A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.0053Ohm
Pulsed Drain Current-Max (IDM)	680A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	590 mJ
RoHS Status	ROHS3 Compliant