FQD30N06TM Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 280 mJ.The maximum input capacitance of this device is 945pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22.7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 90.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FQD30N06TM Features

the avalanche energy rating (Eas) is 280 mJ
a continuous drain current (ID) of 22.7A
based on its rated peak drain current 90.8A.
a 60V drain to source voltage (Vdss)

FQD30N06TM Applications

There are a lot of ON Semiconductor
FQD30N06TM applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,