SI8424DB-T1-E1

new-10%

Manufacturer part number:SI8424DB-T1-E1

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 8V 12.2A 2X2 4-MFP

Case Package:SOT-23

Datasheet:SI8424DB-T1-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	31MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.78W Ta 6.25W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.78W
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	31m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1950pF @ 4V
Current - Continuous Drain (Id) @ 25°C	12.2A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 5V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	1.3A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	5V
Drain to Source Breakdown Voltage	8V
Pulsed Drain Current-Max (IDM)	20A
Nominal Vgs	1 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free