SUP25P10-138-GE3

new-10%

Manufacturer part number:SUP25P10-138-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SUP25P10-138-GE3 MOSFET Transistor, P Channel, -16.3 A, -100 V, 0.115 ohm, -10 V

Case Package:SOT-23

Datasheet:SUP25P10-138-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	unknown
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 73.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.8m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 50V
Current - Continuous Drain (Id) @ 25°C	16.3A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Polarity/Channel Type	P-CHANNEL
Continuous Drain Current (ID)	16.3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	40A
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant