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SI8473EDB-T1-E1

SI8473EDB-T1-E1

SI8473EDB-T1-E1

Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

SOT-23

SI8473EDB-T1-E1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta 2.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) -7.1A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.055Ohm
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

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