SI8475EDB-T1-E1

new-10%

Manufacturer part number:SI8475EDB-T1-E1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V MICROFOOT

Case Package:SOT-23

Datasheet:SI8475EDB-T1-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	1.1W Ta 2.7W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	32m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	80 μs
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.051Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	25A
Avalanche Energy Rating (Eas)	80 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant