SIA426DJ-T1-GE3

new-10%

Manufacturer part number:SIA426DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 4.5A SC70-6

Case Package:SOT-23

Datasheet:SIA426DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	3.5W Ta 19W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23.6m Ω @ 9.9A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	20A
Nominal Vgs	1.5 V
Height	750μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free