IRLU2703PBF

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IRLU2703PBF

Manufacturer part number:IRLU2703PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 23A I-PAK

Case Package:SOT-23

Datasheet:IRLU2703PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	45mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Current Rating	23A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	45W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Case Connection	DRAIN
Turn On Delay Time	8.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	23A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	96A
Dual Supply Voltage	30V
Avalanche Energy Rating (Eas)	77 mJ
Nominal Vgs	1 V
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free