IRLH5036TR2PBF

new-10%

Manufacturer part number:IRLH5036TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 100A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRLH5036TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2012
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation	160W
Turn On Delay Time	23 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	5360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	48ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
Input Capacitance	5.36nF
Recovery Time	42 ns
Drain to Source Resistance	4.4mOhm
Rds On Max	4.4 mΩ
Nominal Vgs	1 V
Height	810μm
Length	5mm
Width	5.0038mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant