SIA811DJ-T1-GE3

new-10%

Manufacturer part number:SIA811DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 4.5A SC70-6

Case Package:SOT-23

Datasheet:SIA811DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual
Weight	28.009329mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	94mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.9W Ta 6.5W Tc
Turn On Delay Time	5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	355pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 8V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	-4.5A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	355pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	94mOhm
Rds On Max	94 mΩ
Height	750μm
Length	2.05mm
Width	2.05mm
RoHS Status	ROHS3 Compliant