BTS282ZAKSA1

new-10%

Manufacturer part number:BTS282ZAKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 49V 80A Automotive 7-Pin(7+Tab) TO-220

Case Package:SOT-23

Datasheet:BTS282ZAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-7
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2001
Series	TEMPFET®
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	7
JESD-30 Code	R-PSFM-T7
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id	2V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	232nC @ 10V
Rise Time	37ns
Drain to Source Voltage (Vdss)	49V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0095Ohm
Pulsed Drain Current-Max (IDM)	320A
DS Breakdown Voltage-Min	49V
Avalanche Energy Rating (Eas)	2000 mJ
FET Feature	Temperature Sensing Diode
Radiation Hardening	No
RoHS Status	RoHS Compliant