SUM110N03-03P-E3

new-10%

Manufacturer part number:SUM110N03-03P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 110A D2PAK

Case Package:SOT-23

Datasheet:SUM110N03-03P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.75W Ta 375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.75W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	110A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0026Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	400A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant