IRLR024NPBF Description

International Rectifier's Fifth Generation HEXFET? Power MOSFETs use cutting-edge processing methods to deliver the lowest onresistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for.

The D-PAK is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For through-hole mounting uses, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRLR024NPBF Features

• Logic-Level Gate Drive

• Surface Mount (IRLR024N)

• Straight Lead (IRLU024N)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

• Lead-Free

IRLR024NPBF Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial