SIE808DF-T1-GE3

new-10%

Manufacturer part number:SIE808DF-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 60A POLARPAK

Case Package:SOT-23

Datasheet:SIE808DF-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	27 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Number of Pins	10
Supplier Device Package	10-PolarPAK® (L)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5.2W Ta 125W Tc
Element Configuration	Single
Power Dissipation	5.2W
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8800pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	45A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	8.8nF
Drain to Source Resistance	1.6mOhm
Rds On Max	1.6 Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant