FQD3P50TM

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FQD3P50TM

Manufacturer part number:FQD3P50TM

Manufacturer:ON Semiconductor

Description:FQD3P50TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQD3P50TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	4.9Ohm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-500V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	-2.1A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Voltage	400V
Power Dissipation-Max	2.5W Ta 50W Tc
Element Configuration	Single
Current	18A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.9 Ω @ 1.05A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.1A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	56ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	-2.1A
Threshold Voltage	-5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-500V
Avalanche Energy Rating (Eas)	250 mJ
Max Junction Temperature (Tj)	150°C
Height	2.517mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free