SIB455EDK-T1-GE3

new-10%

Manufacturer part number:SIB455EDK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET -12V [email protected] 9A P-Ch G-III

Case Package:SOT-23

Datasheet:SIB455EDK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	S-XDSO-N3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.4W Ta 13W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	13W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 5.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 8V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	3.2 ns
Continuous Drain Current (ID)	7.8A
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.027Ohm
Drain to Source Breakdown Voltage	-12V
Pulsed Drain Current-Max (IDM)	25A
RoHS Status	ROHS3 Compliant