SIE818DF-T1-GE3

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Manufacturer part number:SIE818DF-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 75V 60A POLARPAK

Case Package:SOT-23

Datasheet:SIE818DF-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Number of Pins	10
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	10
JESD-30 Code	R-XDSO-N4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5.2W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.2W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.5m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 38V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	79A
Drain-source On Resistance-Max	0.0095Ohm
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	80A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant