NTB27N06LT4

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Manufacturer part number:NTB27N06LT4

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 27A D2PAK-3

Case Package:SOT-23

Datasheet:NTB27N06LT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Powers
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	27A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	88.2W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	48m Ω @ 13.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	990pF @ 25V
Current - Continuous Drain (Id) @ 25°C	27A Ta
Gate Charge (Qg) (Max) @ Vgs	32nC @ 5V
Rise Time	115ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Continuous Drain Current (ID)	27A
Drain-source On Resistance-Max	0.048Ohm
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	94 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead