IRFSL3004PBF

new-10%

Manufacturer part number:IRFSL3004PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 195A TO262

Case Package:SOT-23

Datasheet:IRFSL3004PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	380W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.75m Ω @ 195A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Ta
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	220ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	130 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	340A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Height	9.65mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	RoHS Compliant