SIE848DF-T1-E3

new-10%

Manufacturer part number:SIE848DF-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 60A POLARPAK

Case Package:SOT-23

Datasheet:SIE848DF-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Number of Pins	10
Supplier Device Package	10-PolarPAK® (L)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	2.2MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-50°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	5.2W Ta 125W Tc
Element Configuration	Single
Power Dissipation	5.2W
Turn On Delay Time	45 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	138nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	43A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	6.1nF
Drain to Source Resistance	1.6mOhm
Rds On Max	1.6 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free