SIHA20N50E-E3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 204 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1640pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 550V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 550V.There is a peak drain current of 42A, its maximum pulsed drain current.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
SIHA20N50E-E3 Features
the avalanche energy rating (Eas) is 204 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 550V voltage
based on its rated peak drain current 42A.
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
SIHA20N50E-E3 Applications
There are a lot of Vishay Siliconix
SIHA20N50E-E3 applications of single MOSFETs transistors.
- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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- Industrial Power Supplies
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- PFC stages, hard switching PWM stages and resonant switching
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- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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- Lighting, Server, Telecom and UPS.
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