SIHF16N50C-E3

new-10%

Manufacturer part number:SIHF16N50C-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 16A TO-220

Case Package:SOT-23

Datasheet:SIHF16N50C-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	38W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Case Connection	ISOLATED
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Rise Time	156ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	16A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	500V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant