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SIHG22N60E-E3

SIHG22N60E-E3

SIHG22N60E-E3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 180mOhm @ 11A, 10V ±30V 1920pF @ 100V 86nC @ 10V 600V TO-247-3

SOT-23

SIHG22N60E-E3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 180mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Power Dissipation 227W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.92nF
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.93000 $4.93
10 $4.40000 $44
100 $3.60800 $360.8
500 $2.92160 $1460.8
1,000 $2.46400 $2.464
2,500 $2.34080 $4.6816
SIHG22N60E-E3 Product Details

SIHG22N60E-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1920pF @ 100V.This device conducts a continuous drain current (ID) of 21A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 59 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 180mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SIHG22N60E-E3 Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 59 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 2V
a 600V drain to source voltage (Vdss)


SIHG22N60E-E3 Applications


There are a lot of Vishay Siliconix
SIHG22N60E-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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