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SIHP18N60E-GE3

SIHP18N60E-GE3

SIHP18N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 18A TO220AB

SOT-23

SIHP18N60E-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 179W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 202mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.72480 $1.7248

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