SIHP28N60EF-GE3

new-10%

Manufacturer part number:SIHP28N60EF-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 600V [email protected] 28A N-Ch MOSFET

Case Package:SOT-23

Datasheet:SIHP28N60EF-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	123m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2714pF @ 100V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	39 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	28A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	75A
DS Breakdown Voltage-Min	600V
RoHS Status	ROHS3 Compliant