SIHP8N50D-E3

new-10%

Manufacturer part number:SIHP8N50D-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 500V [email protected] 8.7A N-Ch D-SRS

Case Package:SOT-23

Datasheet:SIHP8N50D-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	527pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.7A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	8.7A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	5V
Drain-source On Resistance-Max	0.85Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	29 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant